Light emitting diode

ABSTRACT

A light emitting diode having a substrate, an electron injection layer, an active layer, a hole injection layer, a first pad electrically connected to the hole injection layer, and a second pad electrically connected to the electron injection layer. The hole injection layer includes an activated region and a patterned non-activated region. The first pad is disposed upon the non-activated region and the first pad and the non-activated region are overlapping in the vertical direction.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention is related to a light emitting diode (LED) and amethod of manufacturing the same, and particularly, to a LED capable ofsolving problems of current crowding effect and method of manufacturingthe same.

2. Description of the Prior Art

The emission of LED is resulted from the band gap energy released byrecombination of the electrons and the holes in the semiconductormaterials. LED has advantages of small size, long life-span, low drivingvoltage, low energy consumption, short reaction time, andanti-vibration, and so that, LED is popularly used in display devices orlight units for illumination in our daily life.

In order to increase LED's efficiency and brightness, current spreadingin the LED is a significant factor. Please refer to FIG. 1. FIG. 1 is aschematic diagram illustrating a conventional LED 10. The LED 10 isformed on a substrate 19, including an n-type semiconductor layer 18, anactive layer 16, and a p-type semiconductor layer 14. A p-type electrode12 is disposed on the p-type semiconductor layer 14, and the p-typeelectrode 12 is electrically connected to the p-type semiconductor layer14. The n-type semiconductor layer 18 is electrically connected to ann-type electrode 20. Since the LED 10 is required to have a larger sizeand higher brightness, the driving current for the LED 10 isconsequently increased. The current injects the LED 10 from the p-typeelectrode 12, goes down through the p-type semiconductor layer 14, theactive layer 16, and the n-type semiconductor layer 20, and eventuallyarrives at the n-type electrode 20. However, the increased currentresults in non-homogenous distribution of the current in the LED 10. Asshown in FIG. 1, the current injected from the p-type electrode 12 iscrowded within in a region under the p-type electrode 12 withoutspreading out. This is so called “current crowding effect.” The currentcrowding effect diminishes the emission region of the LED and theefficiency of the LED.

To solve the problem of the current crowding effect, a component isadded under the p-type electrode to force the current to spread out.Please refer to FIG. 2. FIG. 2 shows another conventional LED 10, whichhas the same elements and uses the same notation as those shown inFIG. 1. As shown in FIG. 2, a current diffusion layer 17 made of indiumtin oxide (ITO) is formed between the p-type electrode and the p-typesemiconductor 14. A current blocking layer 22 made of SiO₂ is formed inthe p-type semiconductor layer 14 under the p-type electrode 12. SinceSiO₂ is an insulating material, the current injected into the p-typeelectrode 12 is forced to flow laterally rather than limited within theregion under the p-type electrode 12. However, the formation of thecurrent blocking layer 22 requires extra fabrication processes. Forexample, after the thin films, including the n-type semiconductor layer18, the active layer 16, and the p-type semiconductor layer 14, areformed, a lithography, an etch process, and a deposition process areperformed to form the current blocking layer 22. Therefore, theformation of the current blocking layer 22 not only increases thecomplexity of the LED fabrication process, but also increases thedifficulty thereof.

However, several problems need to be solved, such as non-homogeneousdistribution of the current and the light emission, and the problems ofheat dispersal. In addition, the tendency of LED is to reduce powerloss, to increase efficiency and brightness of the LED, and to overcomethe heat dispersal resulting from increase of brightness. Theses are thechallenges of the current LED industry.

SUMMARY OF THE INVENTION

The present invention discloses an LED and the method of manufacturingthe same to overcome the low efficiency of light emission resulting fromcurrent crowding effect.

According to the present invention, an LED is provided. The LED includesa substrate, an electron injection layer, an active layer, and a holeinjection layer. The hole injection layer is electrically connected to afirst pad, and a current diffusion layer is optionally disposed betweenthe hole injection layer and the first pad. The electron injection layeris disposed on the substrate, and the hole injection layer is disposedon the active layer. The hole injection layer has an activated regionand a patterned non-activated region. The first pad of the LED isoverlapped with the non-activated region in the vertical direction.

In addition, the present invention further provides a method of formingan LED. A substrate is provided, and an electron injection layer, anactive layer, and a hole injection layer are sequentially formed on thesubstrate. A patterned mask is provided as a shielding mask. A lightsource is provided to illuminate the mask and the hole injection layerto transfer the pattern of the mask to the hole injection layer and toactivate a portion of the hole injection layer without shielding of themask. Therefore, an activated region and a non-activated region aredefined on the hole injection layer. A current diffusion layer is formedon the hole injection layer. A first pad is formed and electricallyconnected to the hole injection layer. The first pad is overlapped withthe patterned non-activated region in the vertical direction.

The hole injection layer of the LED of the present invention ispartially activated by a laser to define the activated region and thepatterned non-activated region. The patterned non-activated region has ahigher contact resistance (or a lower hole carrier concentration) thanthat of the activated region. As a result, the current from the firstpad hardly goes downward but spreads out to form a homogeneous current.In addition, the LED of the present invention is formed without extraetch process or extra deposition process so that the complexity and thedifficulty of the fabrication process are reduced.

These and other objectives of the present invention will no doubt becomeobvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiment that isillustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram illustrating a conventional LED.

FIG. 2 is a schematic diagram illustrating another conventional LED.

FIG. 3 through FIG. 6 are schematic diagrams illustrating an LED and amethod for manufacturing the same according to a preferred embodiment ofthe present invention.

FIG. 7 a and FIG. 7 b are schematic diagrams illustrating the currentpath of a respective LED.

FIG. 8 a and FIG. 8 b are schematic diagrams illustrating a LEDaccording to another preferred embodiment of the present invention.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings, which form a part of this application. Thedrawings show, by way of illustration, specific embodiments in which theinvention may be practiced. It is to be understood that otherembodiments may be utilized and structural changes may be made withoutdeparting from the scope of the present invention.

Please refer to FIG. 3 through FIG. 6, which are schematic diagramsillustrating an LED and a method for manufacturing the same according toa preferred embodiment of the present invention. FIG. 3 a, FIG. 4 a,FIG. 5 a, and FIG. 6 a are top-view diagrams of the LED of the presentinvention. FIG. 3 b, FIG. 4 b, FIG. 5 b, and FIG. 6 b are sectionaldiagrams of the LED of the present invention. Please refer to FIG. 3 aand FIG. 3 b. A substrate 30 is provided and the substrate 30 of thepresent embodiment may be an insulating substrate, such as a sapphiresubstrate, a GaN substrate, a Si substrate, or a ZnO substrate. Asubstrate patterning process is performed, such as a dry etch process toetch the substrate 30, to form a plurality of protrusions 34 on a topsurface 32 of the substrate 30. For example, each protrusion 34 is knobof a hexagon shape. The protrusions 34 are arranged as a scatteringpattern 36. The shape of the protrusion 34 is not limited to thehexagon-shaped knob shown in the present embodiment, but other shapesare allowable. The scattering pattern 36 is not limited to the 2D matrixshown in the present embodiment. The scattering pattern may be a stripor a texture surface which is capable of improving light emissionefficiency. In addition, when the substrate patterning process isperformed, a plurality of alignment marks 38 may be simultaneouslyformed on the top surface 32 of the substrate 30 for correction andalignment in the following process.

As shown in FIG. 4 a and FIG. 4 b, a buffer layer 40, an electroninjection layer 42, an active layer 44, a hole transport layer 46, and ahole injection layer 48 are sequentially formed on the substrate 30. Thebuffer layer 40 may be an AlN thin film grown in low temperature, a GaNthin film, or other thin film which has a lattice structure matchingwith the substrate 30 and the electron injection layer 42. The electroninjection layer 42 and the hole injection layer 48 are transparent thinfilm, including GaN, GaP, SiC, ZnO, MgO, Si, or GaAs. The materials ofthe electron injection layer 42 and the hole injection layer 48 areelectrically corresponded, and have good carrier restriction ability orgood photo restriction ability. For example, the electron injectionlayer 42 of the present invention is a n-type GaN thin film, and thehole injection layer 48 is a p-type GaN thin film electricallycorresponded to the electron injection layer 42. The active layer 44disposed between the electron injection layer 42 and the hole injectionlayer 48 may be a multiple quantum well (MQW) or adouble-heterostructure (DH). Furthermore, the formation of the holetransport layer 46 disposed between the hole injection layer 48 and theactive layer 44 is optional. The material of the hole transport layer 46may include a p-type AlGaN thin film that the hole transport layer 46acts as a spacer for modulating the hole mobility and increasingrecombination of the electron and the hole in the active layer 44.

Please refer to FIG. 5 a and FIG. 5 b. A patterned mask 50 is providedand aligned with the substrate 30 using the alignment marks 38 formed onthe substrate 30. A light source 52 is provided, such as a laser or alight source capable of providing partial activation by heat orradiation, to illuminate the mask 50 and the hole injection layer 48.The pattern of the mask 50 is transferred to the hole injection layer48. Consequently, a portion of the hole injection layer 48 withoutshielding of the mask 50 is activated and an activated region 481 isdefined. On the other hand, another portion of the hole injection layer48 covered by the mask 50 is defined as a patterned non-activated region482. For example, the present invention uses laser as the light source52 to activate and to pattern the hole injection layer 48. The powerdensity of the laser is between 200 and 1500 mJ/cm², preferably between500 and 700 mJ/cm². The pulse time of the laser is approximately between10 and 300 ns, and 20 ns is preferable. The frequency of the laser isbetween 1 and 500 Hz, and 300 Hz is preferable. The wavelength of thelaser is approximately between 200 and 1200 nm, and 248 nm or 308 nm ispreferable. The wavelength of the laser is not limited to the presentembodiment. Furthermore, a plurality of L-shaped patterns is disposed onthe mask 50, shown in FIG. 5 a. Each L-shaped pattern includes a roundcenter and two perpendicular arranged wings expanding from the center.After the illumination of the laser, a plurality of patternednon-activated regions 482 having an L shape is formed on the holeinjection layer 48. The hole carrier concentration of the patternednon-activated region 482 is less than 10¹⁶ cm⁻³, and the carriermobility is less than 1 cm²/Vs. The contact resistance of the patternednon-activated region 482 is higher than 10⁻² Ohmic/cm². On the contrary,the activated region 481 activated by the laser has a hole carrierconcentration of more than 10¹⁷ cm⁻³. The carrier mobility of theactivated region 481 is increased to more than 20 cm²/Vs and the contactresistance thereof is decreased from 10⁻² Ohmic/cm² to less than 10⁻³Ohmic/cm². As a result, by means of laser illumination and the usage ofthe mask 50, the hole carrier concentration and the carrier mobility ofthe activated region 481 increase by more than one order in contrast tothe patterned non-activated region 482 after laser illumination. Inaddition, the contact resistance of the activated region 481 isdecreased by more than one order.

As shown in FIG. 6 a and FIG. 6 b, a current diffusion layer 54 isformed on a surface of the hole injection layer 48 having the activatedregion 481 and the patterned non-activated region 482 therein. Thecurrent diffusion layer 54 may be a transparent conductive layer, suchas an ITO layer. An etch process is performed to etch a portion of thehole injection layer 48, a portion of the hole transport layer 46, and aportion of the active layer 44 to expose a surface 421 of a portion ofthe electron injection layer 42. A first pad 56 is formed on the currentdiffusion layer 54 and the first pad 56 is electrically connected to thehole injection layer 48. A second pad 58 is formed on the exposedsurface 421 of the electron injection layer 42, and the second pad 58 iselectrically connected to the electron injection layer 42. The formationof the first pad 56 uses the alignment marks 38 for alignment. Anevaporation process or a sputtering process is performed to deposit Au,Ge, Ni, Cr, Pt, or combinations thereof on the current diffusion layer54. The position and the shape of the first pad 56 correspond to thepatterned non-activated region 482 that the patterned non-activatedregion 482 is disposed under the first pad 56 and is overlapped with thepatterned non-activated region in the vertical direction.

Accordingly, the formation of the LED utilizes the alignment mark 38 foralignment. Subsequent to the formation of the patterned non-activatedregion 482 in the hole injection layer 48, the first pad 56 is formedand disposed accurately above the pattern non-activated region 482 usingthe alignment mark 38 for alignment. Please refer to FIG. 7 a and FIG. 7b, which are schematic diagrams illustrating the current path of arespective LED. The LED shown in FIG. 7 a does not have the activatedregion 481 and the patterned non-activated region 482. The LED of thepresent invention is shown in FIG. 7 b that the LED has the patternednon-activated region 482 of lower hole carrier concentration disposedunder the first pad 56. As shown in FIG. 7 a, the current injected fromthe first pad 56 goes downward without spreading out and arrives at theelectron injection layer 42. On the other hand, the current injectedfrom the first pad 56 shown in FIG. 7 b spreads out because thepatterned non-activated region 482 disposed under the first pad 56 has ahigher contact resistance than that of the activated region 481 and sothat the current passes through the activated region 481 of a lowercontact resistance. The injected current initially spreads out laterallyin the current diffusion layer 54 and passes through the active layer 44and the electron injection layer 42. In addition, the LED of the presentinvention prevents light emission from being limited by the first pad56, and so that, the LED of the present invention solves the problem oflow illumination efficiency resulting from the current crowding effect.

The method of forming the LED of the present invention is not limited tothe aforementioned embodiment. Please refer to FIG. 8 a and FIG. 8 b,which are schematic diagrams illustrating a LED according to anotherpreferred embodiment of the present invention. FIG. 8 a is a top-viewdiagram of the LED of the present embodiment, and FIG. 8 b is asectional diagram of the LED of the present embodiment. As shown in FIG.8 a and FIG. 8 b, the alignment mark may be formed after the formationof the buffer layer 40, the electron injection layer 42, and the activelayer 44, and the hole injection layer 46. An etch process is performedto etch a portion of the hole injection layer 48, a portion of the holetransport layer 46, and a portion of the active layer 44 to expose asurface 421 of a portion of the electron injection layer 42, and atleast an alignment mark 60 is formed on the exposed surface 421 foralignment in the follow processes. For example, the formation of thepatterned non-activated region 482 in the hole injection layer 48 andthe formation of the first pad 56 may use the alignment mark 60 foralignment. In addition, the LED of the present invention may have boththe alignment mark 38 disposed on the substrate 30 and the alignmentmark 60 disposed on expose surface 421 of the electron injection layer42 for alignment.

Moreover, the substrate may be a conductive substrate including SiC, Si,GaN or GaAs, and so that the second pad is formed on the other surfaceof the substrate opposite to the electron injection layer. As a result,a vertical structured LED is formed and is used as a light source oflarge area.

The LED of the present invention uses a laser to partially activate thehole injection layer and to define the activated region and thepatterned non-activated region in the hole injection layer. Thepatterned non-activated region has a larger contact resistance and alower hole carrier concentration than that of the activated region whichis capable of preventing current from directly passing downward from thefirst pad, and so that the current is homogeneously presented in theLED. Moreover, no extra etch process or deposition process is requiredto form the LED of the present invention. The complexity and thedifficulty of the fabrication process are therefore reduced.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the invention.

1. (canceled)
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 5. (canceled) 6.(canceled)
 7. (canceled)
 8. A method of forming a light emitting diode(LED), comprising: providing a substrate and sequentially forming anelectron injection layer, an active layer, and a hole injection layer;providing a patterned mask and using a light source to illuminate thepatterned mask and the hole injection layer for transferring the patternfrom the mask to the hole injection layer, activating a portion of holeinjection layer without coverage of the patterned mask, and defining anactivated region and a patterned non-activated region on the holeinjection layer, wherein the light source comprises a laser; and forminga first pad electrically connected to the hole injection layer, whereinthe first pad overlaps the patterned non-activated region of the holeinjection layer vertically.
 9. The method of claim 8, further comprisinga substrate patterning process to form a scattering pattern on a surfaceof the substrate prior to the formation of the electron injection layer,the active layer, and the hole injection layer.
 10. The method of claim9, further comprising forming an alignment mark on the surface of thesubstrate.
 11. The method of claim 8, further comprising performing anetch process to etch a portion of the hole injection layer and a portionof the active layer to expose a surface of a portion of the electroninjection layer before a portion of the electron injection layer isactivated.
 12. The method of claim 11, further comprising forming atleast an alignment mark on the exposed surface of the electron injectionlayer.
 13. The method of claim 11, further comprising forming a secondpad on the exposed surface of the electron injection layer, the secondpad being electrically connected to the electron injection layer. 14.The method of claim 8, wherein the patterned non-activated region has acontact resistance higher than that of the activated region.
 15. Themethod of claim 8, wherein the patterned non-activated region has a holecarrier concentration less than that of the activated region. 16.(canceled)
 17. The method of claim 8, wherein the laser has a powerdensity between 200 and 1500 mJ/cm.sub.2.
 18. The method of claim 8,further comprising forming a hole transport layer on the active layerprior to the formation of the hole injection layer.
 19. The method ofclaim 8, further comprising forming a buffer layer on the substrateprior to the formation of the electron injection layer.
 20. The methodof claim 8, further comprising forming a current diffusion layer on thehole injection layer prior to the formation of the first pad.
 21. Amethod of forming a light emitting diode (LED), comprising: providing asubstrate and sequentially forming a plurality of layers including ahole injection layer; providing a patterned mask and using a lightsource to illuminate the patterned mask and the hole injection layer fortransferring the pattern from the mask to the hole injection layer,wherein the light source comprises a laser; activating a portion of holeinjection layer without coverage of the patterned mask; and defining anactivated region and a patterned non-activated region on the holeinjection layer.
 22. The method of claim 21, wherein the plurality oflayers further comprises an electron injection layer and an activelayer.
 23. The method of claim 21, further comprising forming a firstpad electrically connected to the hole injection layer, wherein thefirst pad overlaps the patterned non-activated region of the holeinjection layer vertically
 24. The method of claim 22, furthercomprising a substrate patterning process to form a scattering patternon a surface of the substrate prior to the formation of the electroninjection layer, the active layer, and the hole injection layer.
 25. Themethod of claim 22, further comprising performing an etch process toetch a portion of the hole injection layer and a portion of the activelayer to expose a surface of a portion of the electron injection layerbefore a portion of the electron injection layer is activated.
 26. Themethod of claim 22, further comprising forming a hole transport layer onthe active layer prior to the formation of the hole injection layer. 27.The method of claim 22, further comprising forming a buffer layer on thesubstrate prior to the formation of the electron injection layer. 28.The method of claim 23, further comprising forming a current diffusionlayer on the hole injection layer prior to the formation of the firstpad.